Development of semiconductor detectors based on wide-gap materials

Atomic Energy

Volumn 97, Issue 5, 2004, Pages 773-780

  Zaletin, V M ^a  

^a Inst for Physico Technical Problems   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL STRUCTURE; ELLIPSOMETRY; ENERGY GAP; LEAKAGE CURRENTS; LIGHT POLARIZATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; THERMOELECTRICITY;

DEFECT DENSITY; GAS COUNTERS; ROOM TEMPERATURE; TIME-VARYING POLARIZATION;

RADIATION DETECTORS;

EID: 14844348497     PISSN: 10634258     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10512-005-0061-5     Document Type: Article

References (19)

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