Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 895-898

  Spitale, E ^a   Corso, D ^a   Crupi, I ^a   Lombardo, S ^a   Gerardi, C ^b  

^a CNR IMM   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; PERMITTIVITY; SILICON;

DIELECTRIC STRUCTURE; MEMORY CELLS; NANOCRYSTAL MEMORIES; SILICON NANOCRYSTALS;

FLASH MEMORY;

EID: 14644425990     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.029     Document Type: Conference Paper

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5. J. Robertson J Vac Sci Technol B 2000
6. M. Depas, and B. Vermeire Solid-State Electron 1995