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Volumn 92, Issue 4, 2004, Pages 468031-468034

Symmetry of Two-Terminal Nonlinear Electric Conduction

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTORS; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); MAGNETIC FIELD EFFECTS; NONLINEAR SYSTEMS; SEMICONDUCTOR QUANTUM DOTS; TENSORS;

EID: 1442355870     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (46)

References (23)
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    • R. A. Webb, S. Washburn, and C. P. Umbach, Phys. Rev. B 37, 8455 (1988); S. B. Kaplan, Surf. Sci. 196, 93 (1988); P. G. N. de Vegvar et al., Phys. Rev. B 38, 4326 (1988); R. Taboryski et al., Phys. Rev. B 49, 7813 (1994); P. A. M. Holweg et al., Phys. Rev. Lett. 67, 2549 (1991); D. C. Ralph, K. S. Ralls, and R. A. Buhrman, Phys. Rev. Lett. 70, 986 (1993).
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    • R. A. Webb, S. Washburn, and C. P. Umbach, Phys. Rev. B 37, 8455 (1988); S. B. Kaplan, Surf. Sci. 196, 93 (1988); P. G. N. de Vegvar et al., Phys. Rev. B 38, 4326 (1988); R. Taboryski et al., Phys. Rev. B 49, 7813 (1994); P. A. M. Holweg et al., Phys. Rev. Lett. 67, 2549 (1991); D. C. Ralph, K. S. Ralls, and R. A. Buhrman, Phys. Rev. Lett. 70, 986 (1993).
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    • R. A. Webb, S. Washburn, and C. P. Umbach, Phys. Rev. B 37, 8455 (1988); S. B. Kaplan, Surf. Sci. 196, 93 (1988); P. G. N. de Vegvar et al., Phys. Rev. B 38, 4326 (1988); R. Taboryski et al., Phys. Rev. B 49, 7813 (1994); P. A. M. Holweg et al., Phys. Rev. Lett. 67, 2549 (1991); D. C. Ralph, K. S. Ralls, and R. A. Buhrman, Phys. Rev. Lett. 70, 986 (1993).
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    • (1994) Phys. Rev. B , vol.49 , pp. 7813
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    • R. A. Webb, S. Washburn, and C. P. Umbach, Phys. Rev. B 37, 8455 (1988); S. B. Kaplan, Surf. Sci. 196, 93 (1988); P. G. N. de Vegvar et al., Phys. Rev. B 38, 4326 (1988); R. Taboryski et al., Phys. Rev. B 49, 7813 (1994); P. A. M. Holweg et al., Phys. Rev. Lett. 67, 2549 (1991); D. C. Ralph, K. S. Ralls, and R. A. Buhrman, Phys. Rev. Lett. 70, 986 (1993).
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  • 13
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    • R. A. Webb, S. Washburn, and C. P. Umbach, Phys. Rev. B 37, 8455 (1988); S. B. Kaplan, Surf. Sci. 196, 93 (1988); P. G. N. de Vegvar et al., Phys. Rev. B 38, 4326 (1988); R. Taboryski et al., Phys. Rev. B 49, 7813 (1994); P. A. M. Holweg et al., Phys. Rev. Lett. 67, 2549 (1991); D. C. Ralph, K. S. Ralls, and R. A. Buhrman, Phys. Rev. Lett. 70, 986 (1993).
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  • 15
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    • A. Löfgren et al. (to be published)
    • A. Löfgren et al. (to be published).
  • 19
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    • note
    • 2/h)/V was 1-2 orders of magnitude smaller than in typical, surface-gated GaAs/AlGaAs devices.
  • 21
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    • note
    • ij [11].
  • 22
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    • note
    • The CF are superimposed onto a broad background that is due to classical commensurability effects [16]. While the phase-sensitive CF show nonlinear behavior at very small voltages, significant classical nonlinear effects are not (in the absence of CIA) expected until several millivolts, where electron orbits are changed by the applied voltage. However, at those higher voltages the sensitive CF are suppressed due to heating effects. We therefore limit our study to voltages up to 2 mV.


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