Parallel operation of IGBT modules using de-rating factors

Proceedings of the Universities Power Engineering Conference

Volumn 37, Issue , 2002, Pages 305-309

  Chamund, Dinesh ^a   Findlay, Bill ^a   Birkett, Kevan ^a   Shammas, Noel ^b  

^a DYNEX SEMICONDUCTOR LTD   (United Kingdom)

^b STAFFORDSHIRE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC TRACTION; ELECTROCHEMISTRY; GATES (TRANSISTOR); MICROPROCESSOR CHIPS; OSCILLATIONS; POWER ELECTRONICS; THERMODYNAMIC STABILITY; THYRISTORS;

DE-RATING FACTORS; PARALLEL OPERATIONS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 1442327765     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Taylor P.D.:"Thyristor Design and Realisation" John Wiley & Sons, January 1993.
2. Grafham D.R. and Hey J.C. "GE SCR Manual" Fifth Edition, General Electric 1977.
3. Chamund D. and Mallinson N.: "Circuits and Devices Impact Parallel IGBT Module Operation" Power Electronics Technology, pp. 26-30, February 2002.
4. Letor R.: "Static and dynamic Behaviour of Paralleled IGBT's": IEEE Trans on Industry Applications, Vol.28, No.2, pp. 395-402, March 1992.