Thin film transistors based on molecular semiconductors

Pure and Applied Chemistry

Volumn 68, Issue 7, 1996, Pages 1455-1462

  Gamier, Francis ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1442327014     PISSN: 00334545     EISSN: None     Source Type: Journal    
DOI: 10.1351/pac199668071455     Document Type: Article

References (28)

1. Pope, M. and Swenberg, C.E. Electronic Processes in Organic Crystals, Oxford University Press, New York, 1982.
2. Ghosh, A.K. and Feng, T., J. Appl. Phys. 49, 1978, 5982.
3. R.O. Loutfy, J.H. Sharp, C.K. Hsiao, R. Ho, J. Appl. Phys., 52, 1981, 5218
4. T.J. Skoktheim, Handbook of Conducting Polymers, Wiley and Sons, New York, 1985.
5. Basescu, N., Liu, Z.X., Moses, D., Heeger, A.J., Naarman, H. and Theophilou, N., Nature, 327, 1987, 403.
6. Burroughes, J.H., Bradley, D.C.C., Brown, A.R., Marks, R.N., McKay, K., Friend, R.H., Burns, P.N. and Holmes, R.B. Nature , 341, 1990), 539.
7. Tsumura, A., Koezuka, H. and Ando, Y, Synthet. Metal. 25, 1988, 11.
8. Horowitz, G., Fichou, D., Peng, X.Z., Xu, Z.G. and Garnier, F., Solid State Commun. 72, 1989, 381.
9. Assadi, A., Svensson, C., Willander, M. and Inganäs, O., Appl. Phys. Lett. 53, 1988, 195.
10. Paloheimo, J., Kuivalainen, P., Stubb, H., Vuorimaa, E. and Yli-Lahti, P., Appl. Phys. Lett. 56, 1990, 1157.
11. Xie, Z., Abdou, M.S.A., Lu, X., Deen, M.J. and Holdcroft, S., Can. J. Phys. 70, 1992, 1171.
12. Horowitz, G., Peng, X.Z., D. Fichou , D. and Garnier, F., J. Appl. Phys. 67, 1990, 528.
13. Gamier, F., Horowitz, G., Peng, X.Z. and Fichou, D., Adv. Mater., 2, 1990, 592.
14. Sze, S.M., Physics of Semiconductor Devices, John Wiley, New York, 1981.
15. Gamier, F., Hajlaoui, R., Yassar, A. and Srivastava, P., Science 265, 1994, 1684.
16. Akimichi, H., Waragai, K., Hotta, S., Kano, H. and Sakati, H., Appl. Phys. Lett. 58, 1991, 1500.
17. Hotta, S. and Waragai, K. J. Mater. Chem. 1, 1991, 835.
18. Horowitz, G., Deloffre, F., Gamier, F., Hajlaoui, R., Hmyene, M. and Yassar, A., Synthet. Metal. 54, 1993, 435.
19. Guillaud, G., Al Sadoun, M., Maitrot, M., Simon, J. and Bouvet, M., Chem. Phys. Lett. 167, 1990, 503.
20. Brown, A.R., Deleeuw, D.M., Lous, E.J. and Havinga, E.E., Synthet. Metal. 66, 1994, 257.
21. Gamier F., Horowitz G., Fichou D., and Sperman P., to be published.
22. Hoshimono, K., Fujimori, S., Fujita, S. and Fujita, S., Jpn. J. Appl. Phys. Pt 2 32, 1993, L1070.
23. Delabouglise, D., Hmyene, M., Horowitz, G., Yassar, A. and Gamier, F., Adva Mater. 4, 1992, 107.
24. Gamier, F., Yassar, A., Hajlaoui, R., Horowitz, G., Deloffre, F., Servet, B., Ries, S. and Alnot, P. J. Am. Chem. Soc. 115, 1993, 8716.
25. Waragai, K., Akamichi, H., Hota, S., Kano, H. and Saraki, H., Synth. Met., 57, 1993, 4053.
26. Servet, B., Horowitz, G., Ries, S., Lagorsse, O., Alnot, P., Yassar, A., Deloffre, F., Srivastava, P., Hajlaoui, R., Lang, P. and Gamier, F. , Chem. Mater. 6, 1994, 1809.
27. Dodabalapur, A., Torsi, L. and Katz, H.E., Science , 268, 1995, 270.
28. Horowitz, G., Bachet, B., Yassar, A., Lang, P., Demanze, F., Fave, J.L and Gamier, F., Chem. Mater., 1995, in press.