Role of two-hole localization in anion-vacancy formation on the (110) surfaces of InP and GaAs at the third regime of Langmuir evaporation

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 3, 2004, Pages

  Tanimura, K ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANION; ARSENIC DERIVATIVE; GALLIUM; INDIUM; PHOSPHORUS DERIVATIVE;

ARTICLE; CHEMICAL BOND; ENERGY; EVAPORATION; SEMICONDUCTOR; SURFACE PROPERTY; VACUUM;

EID: 1442288334     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.033301     Document Type: Article

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