Dielectric-assisted trilayer lift-off process for improved metal definition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 5, 1998, Pages 2759-2762

  Ryan, R W ^a   Kopf, R F ^a   Hamm, R A ^a   Malik, R J ^a,b   Masaitis, R ^a   Opila, R ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b Ovation Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1442267422     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590267     Document Type: Article

References (7)

1. See, for example, R. Williams, Gallium Arsenide Processing Techniques (Artech House, Dedham, MA, 1984).
2. A A Milgram, J. Vac. Sci. Technol. B 1, 490 (1983).
3. J. R. Lothian, F. Ren, S. J. Pearton, U. K. Chakrabarti, C. R. Abernathy, and A. Katz, J. Vac. Sci. Technol. B 10, 2361 (1992).
4. S. P. Lyman, J. L. Jackel, and P. L. Liu, J. Vac. Sci. Technol. 19, 1325 (1981).
5. P. Kalee Prasad and J. Narain, in Semiconductor Devices, edited by K. Lai, Proc. SPIE Vol. 2733 (Narosa Publishing House, New Delhi, India, 1995), p. 499.
6. S. Zhang,W. Li, H. Lin, B. Zhu, C. Fan, J. Lu, J. Xing, and B. Zhu, in 4th International Conference on Solid-State and Intergrated Circuit Technology, Proceedings Cat. No. 95TH8143, edited by G. L. Baldwin, Z. Li, C. C. Tsai, and J. Zhang (IEEE, New York, 1995), pp. 41-43
7. For example, Altilith CEM 420WS.