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Volumn 85, Issue 19, 2000, Pages 4160-4163

Weak charge quantization as an instanton of the interacting σ model

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; ELECTRON ENERGY LEVELS; SEMICONDUCTOR DEVICE MODELS;

EID: 14344267595     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.4160     Document Type: Article
Times cited : (22)

References (31)
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    • note
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    • The better quantity to average is ℜ InÑ(q) [10]. It may be calculated in the same way with a slightly more complicated algebra.
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    • note
    • I am indebted to M. Feigelman for pointing out the mistake in the previous version.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.