Reliability evaluation of 1.3 micron, oxide-apertured, InGaAsN VCSELs

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 2004, Pages 404-405

  Naone, R L ^a   Wasinger, N M ^a   Beltran, J G ^a   Chirovsky, L M F ^a   Rossler, J M ^a   Adamcyk, M ^a   Van Hove, J M ^a   Kisker, D W ^a  

^a Oplink Communications Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOGNORMAL PARAMETERS; LOGNORMAL PROBABILITY; STRESS MATRIX; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

ACTIVATION ENERGY; COMPUTER AIDED SOFTWARE ENGINEERING; DATABASE SYSTEMS; ELECTROMIGRATION; FAILURE ANALYSIS; INDIUM COMPOUNDS; MATHEMATICAL MODELS; MAXIMUM LIKELIHOOD ESTIMATION; MODULATION; PROBABILITY; RELIABILITY THEORY; STRESS ANALYSIS;

SEMICONDUCTOR LASERS;

EID: 14244269850     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. S. R. Prakash, L. M. F. Chirovsky, R. L. Naone, D. Galt, D. W. Kisker, A. W. Jackson, "Reliability of 1.3 micron VCSELs for Metro Area Networks," Proc. of SPIE 2003, 2003, p. 44-54
2. NIST/SEMATECH, e-Handbook of Statistical Methods, http://www.itl.nist. gov/div898/handbook/.