High performance K-band active mixer using BiCMOS SiGe process

Electronics Letters

Volumn 41, Issue 3, 2005, Pages 134-135

  Viallon, C ^a   Graffeuil, J ^a   Parra, T ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC IMPEDANCE; BANDWIDTH; BISMUTH; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT; MILLIMETER WAVES; SCHEMATIC DIAGRAMS; SEMICONDUCTING SILICON; SILICON COMPOUNDS; TRANSCONDUCTANCE; TRANSISTORS;

CIRCUIT DESIGN; DOWN-CONVERSION MIXERS; GILBERT TOPOLOGY; SILICON SUBSTRATES;

MIXER CIRCUITS;

EID: 14244267511     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20057945     Document Type: Article

References (5)

1. Li, Y., et al.: 'High-frequency SiGe - an industrial perspective'. 7th GigaHertz Symp., Linköping, Sweden, November 2003 (http://www.ep.liu.se/ ecp/008/index.html)
2. Hackl, S., et al.: '40 GHz monolithic integrated mixer in SiGe bipolar technology', IEEE MTT-S Int. Microw. Symp. Dig., 2002, pp. 1241-1244
3. Viallon, C., et al.: 'Improved differential structures for balanced microwave applications'. IEEE Asia Pacific Microwave Conf., Seoul, South Korea, November 2003
4. Viallon, C., et al.: 'Design of an original K-band active balun with improved broadband balanced behavior', IEEE Microw. Wirel. Compon. Lett., 2005 (accepted for publication)
5. Gilbert, B.: 'A precise four quadrant multiplier with subnanosecond response', IEEE J. Solid-State Circuits, 1968, 3, (12)