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Volumn 15, Issue 2, 2005, Pages 290-295

Aligned room-temperature bonding of silicon wafers in vacuum by argon beam surface activation

Author keywords

[No Author keywords available]

Indexed keywords

ADHESIVES; ARGON; MICROELECTROMECHANICAL DEVICES; PLASMAS; RESIDUAL STRESSES; SOLIDIFICATION; SURFACE TREATMENT; ULTRAHIGH VACUUM;

EID: 14244265225     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/15/2/007     Document Type: Article
Times cited : (23)

References (22)
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  • 6
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    • Void-free silicon-wafer-bond strengthening in the 200-400°C range
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    • Kissinger, G.1    Kissinger, W.2
  • 13
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    • Effect of surface roughness on room temperature wafer bonding by Ar beam surface activation
    • Takagi H, Maeda R, Chung T R, Hosoda N and Suga T 1998 Effect of surface roughness on room temperature wafer bonding by Ar beam surface activation Japan. J. Appl. Phys. 37 4197-203
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    • Takagi, H.1    Maeda, R.2    Chung, T.R.3    Hosoda, N.4    Suga, T.5
  • 14
    • 0032026156 scopus 로고    scopus 로고
    • 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature
    • Chung T R, Hosoda N, Suga T and Takagi H 1998 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature Appl. Phys. Lett. 72 1565-6
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 1565-1566
    • Chung, T.R.1    Hosoda, N.2    Suga, T.3    Takagi, H.4
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    • Takagi H, Maeda R, Hosoda N and Suga T 1999 Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation Appl. Phys. Lett. 74 2387-9
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 2387-2389
    • Takagi, H.1    Maeda, R.2    Hosoda, N.3    Suga, T.4
  • 17
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    • Takagi H, Maeda R and Suga T 2001 Wafer-scale room-temperature bonding between silicon and ceramic wafers by means of argon-beam surface activation Proc. MEMS 2001 pp 60-3
    • (2001) Proc. MEMS 2001 , pp. 60-63
    • Takagi, H.1    Maeda, R.2    Suga, T.3
  • 18
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  • 19
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  • 20
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    • Transmission electron microscope observations of Si/Si interface bonded at room temperature by Ar beam surface activation
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.