Shallow donor impurity binding energy in the V-shaped quantum well under the crossed electric and magnetic fields

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 27, Issue 1-2, 2005, Pages 198-203

  Kasapoglu, E ^a   Sokmen I ^b  

^a CUMHURIYET UNIVERSITY   (Turkey)

^b DOKUZ EYLUL UNIVERSITY   (Turkey)

Author keywords

Crossed electric and magnetic field; Impurity binding energy

Indexed keywords

BANDWIDTH; BIPOLAR TRANSISTORS; ELECTRIC FIELDS; ENERGY ABSORPTION; HAMILTONIANS; HETEROJUNCTIONS; IMPURITIES; MAGNETIC FIELDS; NATURAL FREQUENCIES; OPTOELECTRONIC DEVICES; PERMITTIVITY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

CROSSED ELECTRIC AND MAGNETIC FIELDS; HETEROSTRUCTURE LAYERS; HYDROGENIC DONOR IMPURITY; IMPURITY BINDING ENERGY;

BINDING ENERGY;

EID: 14044275014     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.11.002     Document Type: Article

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