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4F solution in a vertical motion. This is a crucial step in the functionalization process. If the cantilever is withdrawn slowly enough, the hydrophobic Si - H surface repels the solution and the cantilever remains almost dry. If small droplets from the solution remain on the Si surface, they are carefully blown away using a high-purity argon stream which avoids severe damage to the cantilever surface and poor results due to irregular etching.
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