Magnetoelectronic properties of nanographite ribbons

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 27, Issue 1-2, 2005, Pages 82-97

  Chang, C P ^a   Lu, C L ^b   Shyu, F L ^c   Chen, R B ^d   Huang, Y C ^b   Lin, M F ^b  

^a Tainan Woman's College of Arts and Technology   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c DEPARTMENT OF PHYSICS   (Taiwan)

^d NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

Author keywords

Magnetoelectronic properties; Nanographite ribbons; Tight binding model

Indexed keywords

CRYSTAL GROWTH; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; HAMILTONIANS; MAGNETIC FIELDS; MAGNETOELECTRIC EFFECTS; MATHEMATICAL MODELS; MATRIX ALGEBRA; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; OSCILLATORS (ELECTRONIC); SPECTRUM ANALYSIS;

INTRARIBBON INTERACTION; MAGNETOELECTRONIC PROPERTIES; METAL-INSULATOR TRANSITION; NANOGRAPHITE RIBBONS; TIGHT-BINDING MODEL;

GRAPHITE;

EID: 14044260538     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.10.005     Document Type: Article

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