Effects of hydrogen on electronic properties of doped diamond

Carbon

Volumn 43, Issue 5, 2005, Pages 1009-1014

  Dai, Y ^a   Yan, C X ^a   Li, A Y ^a   Zhang, Y ^a,b   Han, S H ^a  

^a SHANDONG UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Diamond; Electronic properties

Indexed keywords

BORON; COMPLEXATION; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HYDROGEN; PROBABILITY DENSITY FUNCTION;

CONDUCTION BANDS; DONOR LEVELS; ELECTRICALLY ACTIVE CENTERS; MULTIPLE TRAPPING;

DIAMONDS;

EID: 13944272332     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2004.11.035     Document Type: Article

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