MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence

Physics of the Solid State

Volumn 47, Issue 1, 2005, Pages 113-116

  Sobolev, N A ^a   Denisov, D V ^a   Emel'yanov, A M ^a   Shek, E I ^a   Ber, B Ya ^a   Kovarskii A P ^a   Sakharov, V I ^a   Serenkov, I T ^a   Ustinov, V M ^a   Cirlin, G E ^a   Kotereva, T V ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 13944270343     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1853458     Document Type: Conference Paper

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