A 'static' high-resolution X-ray diffractometer

Journal of Applied Crystallography

Volumn 38, Issue 1, 2005, Pages 62-68

  Fewster, Paul F ^a  

^a MALVERN INSTRUMENTS LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; INFORMATION PROCESSING; SEMICONDUCTOR; SIGNAL DETECTION; SIMULATION; SOLID STATE; SPECTRAL SENSITIVITY; THEORETICAL STUDY; X RAY DIFFRACTION;

SIGE;

EID: 13844308683     PISSN: 00218898     EISSN: None     Source Type: Journal    
DOI: 10.1107/S0021889804026822     Document Type: Article

References (11)

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2. Compton, A. H. (1917). Phys. Rev. 10, 95-96.
3. Fewster, P. F. (1989). J. Appl. Cryst. 22, 64-69.
4. Fewster, P. F. (1991). Basic X-ray Diffraction Methods, edited by M. Grasserbauer & H. W. Werner, ch. 3.1.1. Analysis of Microelectronic Materials and Devices. Chichester: Wiley.
5. Fewster, P. F. (1993). J. Phys. D Appl. Phys. 26, A142-A145.
6. Fewster, P. F. (2000). X-ray Scattering from Semiconductors, 1st ed. London: Imperial College Press.
7. Fewster, P. F. (2003). X-ray Scattering from Semiconductors, 2nd ed. London: Imperial College Press.
8. Fewster, P. F. (2002). Patent Nos. GB 0208572.8, PCT/NL 03/00272.
9. Hedin, L. (1974). Many Body Effects, edited by L. V. Azároffch, ch. 5, X-ray Spectroscopy. New York: McGraw-Hill.
10. Kharchenko, A. (2003). A New X-ray Diffractometer for the Online Monitoring of Epitaxic Process, PhD thesis, Faculty of Physics, University of Paderborn.
11. Takagi, S. (1962). Acta Cryst. 15, 1311-1312.