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Volumn 337-339, Issue 1-3 SPEC. ISS., 2005, Pages 595-599

Dynamic hydrogen isotope behavior and its chemical states in SiC by XPS and TDS technique

Author keywords

First wall; Hydrogen isotopes; Silicon carbide; Surface analysis; Thermal desorption

Indexed keywords

DESORPTION; DEUTERIUM; HYDROGEN; MATHEMATICAL MODELS; QUANTUM THEORY; SILICON CARBIDE; THERMAL CONDUCTIVITY; X RAY PHOTOELECTRON SPECTROSCOPY;

FIRST WALL; HYDROGEN ISOTOPES; SURFACE ANALYSIS; THERMAL DESORPTION;

RADIOISOTOPES;

EID: 13844308442 PISSN: 00223115 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnucmat.2004.07.057 Document Type: Conference Paper

Times cited : (18)

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