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Volumn 310, Issue 1-3, 2005, Pages 303-310

A theoretical study of the excited electronic states of the SiCN system

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DERIVATIVE;

EID: 13844296807     PISSN: 03010104     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.chemphys.2004.11.008     Document Type: Article
Times cited : (14)

References (24)
  • 21
    • 85030810649 scopus 로고    scopus 로고
    • note
    • -1: 335, 532 and 1782 (B3LYP/6-311G*), 272, 563 and 1805 (QCISD/6- 311G*), 321, 550 and 1736 (QCISD(T)/6-311G*), 274, 564 and 1810 (QCISD(full)/6-311G*, i.e. also core electrons included in the correlation), 311, 557, 1735 UHF-UCCSD(T)/cc-pVTZ)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.