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Volumn 310, Issue 1-3, 2005, Pages 303-310
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A theoretical study of the excited electronic states of the SiCN system
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Author keywords
[No Author keywords available]
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Indexed keywords
SILICON DERIVATIVE;
AB INITIO CALCULATION;
ABSORPTION;
ACCURACY;
ARTICLE;
ELECTROCHEMISTRY;
ENERGY;
ENTHALPY;
GEOMETRY;
ISOMER;
OSCILLATION;
THEORETICAL STUDY;
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EID: 13844296807
PISSN: 03010104
EISSN: None
Source Type: Journal
DOI: 10.1016/j.chemphys.2004.11.008 Document Type: Article |
Times cited : (14)
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References (24)
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