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Volumn 476, Issue 1, 2005, Pages 196-200

Optical properties of SiO2/nanocrystalline Si multilayers studied using spectroscopic ellipsometry

Author keywords

Ellipsometry; Nanostructures; Silicon; Transmission electron microscopy

Indexed keywords

ANNEALING; APPROXIMATION THEORY; DEPOSITION; ELLIPSOMETRY; ION BEAMS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SILICA; SILICON; SPECTROSCOPIC ANALYSIS; SPUTTERING; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; VOLUME FRACTION;

EID: 13844256780     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.09.037     Document Type: Article
Times cited : (15)

References (15)
  • 1
    • 0003207986 scopus 로고    scopus 로고
    • Light Emission in Silicon: From Physics to Devices
    • Academic Press San Diego
    • D.J. Lockwood Light Emission in Silicon: From Physics to Devices Semiconductors and Semimetals vol. 49 1998 Academic Press San Diego
    • (1998) Semiconductors and Semimetals , vol.49
    • Lockwood, D.J.1
  • 14
    • 0004441542 scopus 로고
    • Silicon Processing for the VLSI Era
    • Lattice Press
    • S. Wolf, and R.N. Tauber Silicon Processing for the VLSI Era Process Technology vol. 1 1986 Lattice Press
    • (1986) Process Technology , vol.1
    • Wolf, S.1    Tauber, R.N.2
  • 15
    • 0005678124 scopus 로고
    • Semiconductors; Group IV elements and III-V compounds
    • R. Poerschke Springer-Verlag Berlin
    • O. Madelung Semiconductors; group IV elements and III-V compounds R. Poerschke Data in Science and Technology 1991 Springer-Verlag Berlin
    • (1991) Data in Science and Technology
    • Madelung, O.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.