Unipolar space-charge limited current through layers with a disparate concentration of shallow traps: Experiment and model

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Fleissner, Arne ^a   Weise, Wieland ^a   Von Seggern, Heinz ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE CHARACTERISTICS; ELECTRIC FIELD STRENGTH; MOLECULAR ORGANIC SEMICONDUCTORS; SPACE CHARGE LIMIT CURRENT (SPLC);

CARRIER MOBILITY; CURRENT DENSITY; DIODES; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC INSULATORS; ELECTRODES; INDIUM COMPOUNDS; SEMICONDUCTOR MATERIALS;

ELECTRIC SPACE CHARGE;

EID: 13744261802     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1840094     Document Type: Article

References (15)

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15. The undoped host material α-NPD also contains traps (see Ref. 13), which are intrinsic to the material. Therefore, not all injected charge carriers are free charge carriers. However, this situation is already reflected by the mobility μ of the host material and thus in the current-voltage dependence of the undoped device, to which the doped devices are compared to. The considered trapping parameter θ reflects only the additional traps introduced by doping.