Effect of structure on Raman spectra in Cu(In,Ga)3Se5 thin films

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 11, 2004, Pages 1423-1427

  Xu, Chuanming ^a   Xu, Xiaoliang ^a   Xu, Jun ^a   Yang, Xiaojie ^a   Zuo, Jian ^a   Dang, Xueming ^a   Feng, Ye ^a   Huang, Wenhao ^a   Liu, Hongtu ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Cu(In,Ga)3Se5; Lattice vibration; Ordered defect compounds; Raman scattering

Indexed keywords

DEFECTS; LATTICE VIBRATIONS; PHASE SHIFT; RAMAN SPECTROSCOPY;

ANION DISPLACEMENT PARAMETER; BOND LENGTH VARIATION; MODE SHIFT; ORDERED DEFECT COMPOUNDS; TETRAGONAL DISTORTION;

THIN FILMS;

EID: 13744256063     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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