Effect of growth temperature on properties of single crystalline ZnO films prepared by atmospheric MOCVD

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 12, 2004, Pages 1628-1633

  Xiong, Chuanbing ^a   Fang, Wenqing ^a   Pu, Yong ^a   Dai, Jiangnan ^a   Wang, Li ^a   Mo, Chunlan ^a   Jiang, Fengyi ^a  

^a NANCHANG UNIVERSITY   (China)

Author keywords

AFM; MOCVD; PL; XRD; ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; GRAIN SIZE AND SHAPE; SAPPHIRE; SINGLE CRYSTALS; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

GROWTH TEMPERATURE; SINGLE CRYSTALLINE; ULTRAVIOLET EMISSION; ZINC OXIDE THIN FILMS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 13744252197     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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