Effect of hydrogen sulfide on photoelectric characteristics of Al-n-Si-SnO2:Cu-Ag isotype heterostructures

Semiconductors

Volumn 38, Issue 12, 2004, Pages 1381-1383

  Slobodchikov, S V ^a   Russu, E V ^a   Ivanov, E V ^a   Malinin, Yu G ^a   Salikhov, Kh M ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 13644284109     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1836056     Document Type: Article

References (10)

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2. Solid State Gas Sensors, Ed. by P. T. Moseley and B. C. Tofield (Hilger, Bristol, 1987), p. 51.
3. S. V. Slobodchikov, E. V. Russu, É. V. Ivanov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 1234 (2004)
4. [Semiconductors 38, 1198 (2004)].
5. É. I. Adirovich, P. M. Karageorgiǐ-Alkalaev, and A. Yu. Leǐderman, in Double-Injection Currents in Semiconductors (Sovetskoe Radio, Moscow, 1973), Chap. 2, p. 55 [in Russian].
6. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970; Mir, Moscow, 1973), Chap. 13, p. 289.
7. G. G. Kovalevskaya, L. Kratena, M. M. Meredov, et al., Pis'ma Zh. Tekh. Fiz. 15 (12), 55 (1989)
8. [Sov. Tech. Phys. Lett. 15, 478 (1989)].
9. B. A. Akimov, A. V. Albul, A. M. Gas'kov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 400 (1997)
10. [Semiconductors 31, 335 (1997)].