Giant dielectric permittivity of electron-doped manganite thin films, Ca 1-xLa xO 3 (0≤x≤0.03)

Journal of Applied Physics

Volumn 97, Issue 3, 2005, Pages

  Cohn, J L ^a   Peterca, M ^a,c   Neumeier, J J ^b  

^a University of Miami   (United States)

^b MONTANA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERNAL BARRIER-LAYER CAPACITOR (IBLC) STRUCTURES; SEMICONDUCTING GRAINS; SOLID-STATE REACTIONS; SUBSTRATE CAPACITANCES;

ANTIFERROMAGNETISM; CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; GIANT MAGNETORESISTANCE; MANGANESE; NATURAL FREQUENCIES; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; X RAY POWDER DIFFRACTION;

THIN FILMS;

EID: 13644275262     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1834976     Document Type: Article

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