Luminescence properties of cylindrical ZnO microcavities

Semiconductors

Volumn 38, Issue 12, 2004, Pages 1426-1429

  Gruzintsev, A N ^a   Volkov, V T ^a   Dubonos, S V ^a   Knyazev, M A ^a   Yakimov, E E ^a  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 13644253405     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1836065     Document Type: Article

References (9)

1. J. M. Hvam, Phys. Rev. B 4, 4459 (1971).
2. C. Klingshirn, Adv. Mater. Opt. Electron. 3, 103 (1994).
3. D. M. Bagnall, Y. F. Chen, M. Y. Shen, et al., J. Cryst. Growth 184-185, 605 (1998).
4. Z. K. Tang, G. K. Wong, P. Yu, et al., Appl. Phys. Lett. 72, 3270 (1998).
5. A. N. Gruzintsev, V. T. Volkov, C. Barthou, and P. Benalloul, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 741 (2002)
6. [Semiconductors 36, 701 (2002)].
7. M. Obert, B. Wild, G. Bacher, et al., Phys. Status Solidi A 190, 357 (2002).
8. T. Gutbrod, M. Bayer, A. Forhel, and J. P. Reithmaier, Phys. Rev. B 57, 9950 (1998).
9. H. S. Kang, J. S. Kang, J. W. Kim, and S. Y. Lee, J. Appl. Phys. 95, 1246 (2004).