Bridgman growth of Pb[(Zn1/3Nb2/3) 0.91Ti0.09]O3 single crystals using different seeds

Materials Science and Engineering: B

Volumn 117, Issue 2, 2005, Pages 129-133

  Wu, Xianjun ^a,b   Xu, Jiayue ^a   Shi, Mingli ^a   Tong, Jian ^a   Fan, Shiji ^a   Li, Xinhua ^a,b   Zeng, Xinhua ^c   Yao, Xin ^c  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Bridgman method; Crystal growth; Pb (Zn1 3Nb2 3) 0.91Ti0.09 O3; Perovskite structure; Piezoelectric material

Indexed keywords

CRYSTAL GROWTH; DIELECTRIC LOSSES; ELECTROMECHANICAL DEVICES; INTERFACES (MATERIALS); LEAD COMPOUNDS; PERMITTIVITY; PEROVSKITE; PHASE TRANSITIONS; PIEZOELECTRIC MATERIALS; ULTRASONICS;

BRIDGMAN METHOD; DIELECTRIC SPECTROSCOPY; ELECTRON PROBE MICROANALYZER (EPMA); PB[(ZN1/3NB2/3)0.91 TI0.09]O3; PEROVSKITE STRUCTURE;

SINGLE CRYSTALS;

EID: 13544274095     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.11.002     Document Type: Article

References (11)

1. J. Kuwata, K. Uchino, and S. Nomura Jpn. J. Appl. Phys. 21 1982 1298
2. S. Shimanuki, S. Saitoh, and Y. Yamashita Jpn. J. Appl. Phys. 37 1998 3382
3. K. Harada, Y. Hosono, S. Saitoh, and Y. Yamashita Jpn. J. Appl. Phys. 39 2000 3117
4. T. Kobayashi, S. Shimanuki, and S. Saitoh Jpn. J. Appl. Phys. 36 1997 6035
5. R. Newnham MRS Bull. 22 5 1997 20
6. W. Chen, and Z.-G. Ye J. Crystal Growth 233 2001 503
7. J. Xu, J. Tong, M. Shi, and A. Wu J. Crystal Growth 253 2003 274
8. K. Harada, Y. Hosono, S. Saitoh, Y. Yamashita, and K. Miwa J. Crystal Growth 229 2001 294
9. G. Xu, H. Luo, Y. Guo, Y. Gao, H. Xu, Z. Qi, W. Zhong, and Z. Ying Solid State Commun. 120 2001 321
10. J. Tong, M. Shi, G. Qian, and J. Xu Mater. Rev. 18 2004 94 (in Chinese)
11. B. Fang Growth and Electrical Properties of a New Relaxor-based Piezoelectric PZNT Single Crystal 2002 Shanghai Institute of Ceramics Shanghai