Secondary electron imaging of nucleation and growth of GaAs

Surface Science

Volumn 357-358, Issue , 1996, Pages 441-445

  Homma, Yoshikazu ^a   Osaka, Jiro ^a   Inoue, Naohisa ^b  

^a NTT CORPORATION   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

Gallium arsenide; Growth; Molecular beam epitaxy; Nucleation; Scanning electron microscopy (SEM)

Indexed keywords

ANNEALING; CHARACTERIZATION; COALESCENCE; EPITAXIAL GROWTH; IMAGING TECHNIQUES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

ELECTRON BEAM DAMAGE; MONOLAYER GROWTH; NUCLEATION COALESCENCE CYCLE; POST GROWTH ANNEALING; REAL TIME IMAGING; SECONDARY ELECTRON IMAGING;

SCANNING ELECTRON MICROSCOPY;

EID: 13544270382     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00196-3     Document Type: Article

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