Crystalline γ-Al2O3 barrier for magnetite-based magnetic tunnel junctions

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Bataille, A M ^a   Moussy, J B ^a   Paumier, F ^a   Gota, S ^a   Guittet, M J ^a   Gautier Soyer, M ^a   Warin, P ^b   Bayle Guillemaud, P ^b   Seneor, P ^c   Bouzehouane, K ^c   Petroff, F ^c  

^a CEA SACLAY   (France)

^b CEA GRENOBLE   (France)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; ELECTRIC INSULATING MATERIALS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MAGNETITE; MAGNETORESISTANCE; PHASE TRANSITIONS; STOICHIOMETRY; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

MAGNETIC TUNNEL JUNCTIONS (MTJ); PHOTOELECTRONS; RF PLASMA; TUNNEL MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 13544265416     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1846144     Document Type: Article

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