Initial growth stage of CaF2 on Si(111)-7 × 7 studied by high temperature UHV-STM

Surface Science

Volumn 357-358, Issue , 1996, Pages 896-899

  Sumiya, Touru ^a   Miura, Tadao ^a   Tanaka, Shun Ichiro ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DEPOSITION; EPITAXIAL GROWTH; FLUORINE COMPOUNDS; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); MONOLAYERS; SEMICONDUCTING SILICON; SUBSTRATES; THREE DIMENSIONAL;

CALCIUM FLUORIDES; HETEROEPITAXIAL MONOLAYERS; THREE DIMENSIONAL ISLAND FORMATION; ULTRAHIGH VACUUM SCANNING TUNNELING MICROSCOPE; WELL ORDERED ROW LIKE STRUCTURE; WETTING HETEROEPITAXIAL LAYER GROWTH;

SCANNING TUNNELING MICROSCOPY;

EID: 13544264908     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00287-7     Document Type: Article

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