Luminescence properties of solids

Current Opinion in Solid State and Materials Science

Volumn 1, Issue 2, 1996, Pages 177-182

  Hazenkamp, Menno F ^a   Güdel, Hans U ^a  

^a UNIVERSITY OF BERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 13544261822     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(96)80081-7     Document Type: Article

References (52)

1. Henderson B, Imbusch GF: Optical Spectroscopy of Inorganic Solids. Oxford: Clarendon Press; 1989.
2. 4+ ions. These ions were previously identified in this material by electron paramagnetic resonance.
3. 1E excited state.
4. Demos SG, Alfano RR: Subpicosecond time-resolved Raman investigation of optical phonon modes in Cr-doped forsterite. Phys Rev B 1995, 52:987-996.
5. -1. It shows a rich vibrational structure in several host lattices, which allows a detailed analysis of the vibronic coupling. As the luminescence of this dopant ion in several hosts persists up to room temperature, it might be interesting for future applications in tunable near-infrared lasers.
6. 2+ is studied. This complex is an important photoredox system which is used in solar cells. Although the experimental work is of high quality, it should be noted that some of the conclusions are questioned by other researchers, for example those in [7].
7. 2+ complexes. J Phys Chem 1994, 98:8044-8049.
8. -). Theor Chim Acta 1995, 91:215-224.
9. 2g laser levels. J Chem Phys 1995, 103:2117-2125.
10. 3+ doped laser materials. The agreement with experimental data is reasonable and the present results are very promising.
11. Wexler D, Zink JI, Reber C: Spectroscopic manifestations of potential surface coupling along normal coordinates in transition metal complexes. In Topics in Current Chemistry, vol 171: Electronic and Vibronic Spectra of Transition Metal Complexes I. Edited by Verein H. Berlin: Springer; 1994:173-203.
12. 4]I. Inorg Chem 1995, 34:3851-3852.
13. 3+ doped crystal. The achievement of laser action at room temperature in a crystal is very important for future commercial applications.
14. -1) excitation. Chem Phys 1995, 193:339-344.
15. 3+ ions. J Non-Cryst Solids 1995, 184:309-314.
16. 3+. Phys Rev B 1994, 50:16264-16273.
17. 4 crystal. J Luminesc 1995, 65:45-56.
18. 3+. J Luminesc 1994, 62:271-279.
19. 6. Chem Phys Lett 1995, 238:378-386.
20. 3+:YAG. Phys Rev B 1995, 52:3309-3314.
21. Rebane KK: Zero-phonon line as the foundation stone of high-resolution matrix spectroscopy, persistent spectral hole burning, single impurity molecule spectroscopy. Chem Phys 1994, 189:139-148.
22. -1) at 1.2K. It is the smallest homogeneous line width of an optical transition in a solid reported so far. It was measured in the time domain using the photon echo technique.
23. 3+- doped silicate glasses. Phys Rev B 1994, 50:15707-15718.
24. 2+ doped crystals, which is of importance for the use of hole burning in optical data storage. In this paper recent results on these materials are reviewed.
25. 2+-doped silicate glasses prepared by the sol-gel process. Appl Phys Lett 1995, 66:2952-2954.
26. 3+. J Luminesc 1994, 59:269-275.
27. Moemer WE: Examining nanoenvironments in solids on the scale of a single isolated impurity molecule. Science 1994, 265:46-53. A good overview is given of the most recent developments in the field of single molecule spectroscopy.
28. Basché T, Kummer S, Bräuchte C: Direct observation of quantum jumps of a single molecule. Nature 1995, 373:132-134. The quantum jump of a single terrylene molecule from the excited singlet state into the excited triplet state has been directly observed using time-dependent luminescence spectroscopy. After singlet to triplet intersystem crossing the molecule is 'dark' for a period of time corresponding to the triplet state lifetime.
29. Kozankiewicz B, Bernard J, Orrit M: Single molecule lines and spectral holes of terrylene in different matrices. J Chem Phys 1994, 101:9377-9383.
30. Heinzelmann H, Pohl DW: Scanning near-field optical microscopy. Appl Phys A 1994, 59:89-103.
31. Tarrach G, Bopp MA, Zeisel D, Meixner AJ: Design and construction of a versatile scanning near-field optical microscope for fluorescence imaging of single molecules. Rev Sci Instr 1995, 66:3569-3575.
32. Trautman JK, Macklin JJ, Brus LE, Betzig E: Near-field spectroscopy of single molecules at room temperature. Nature 1994, 369:40-42. The high spatial resolution of the scanning near-field optical microscopy technique (SNOM) enabled the authors to measure the first luminescence spectrum of a single dye molecule at room temperature. This opens the possibility of performing similar spectroscopic studies of biological systems at ambient conditions.
33. Xie XS, Dunn RC: Probing single molecule dynamics. Science 1994, 265:361-364.
34. Moemer WE, Plakhotnik T, Irngartinger T, Wild UP, Pohl DW, Hecht B: Near-field optical spectroscopy of individual molecules in solids. Phys Rev Lett 1994, 73:2764-2767.
35. Hess HF, Betzig E, Harris TD, Pfeiffer LN, West KW: Near-field spectroscopy of the quantum constituents of a luminescent system. Science 1994, 264:1740-1745. Under high spatial and spectral resolution the nature of the individual luminescent centres in a GaAs/AlGaAs quantum well is studied. The study illustrates the great possibilities of the SNOM technique, which can also be used in semiconductor physics.
36. Zenhausern F, Martin Y, Wickramasinghe HK: Scanning interferometric apertureless microscopy: optical imaging at 10 angstroms resolution. Science 1995, 269:1083-1085. A new technique, scanning interferometric near-field optical microscopy, achieving a resolution of 1 nm, is demonstrated. The technique is related to SNOM, but relies on a different principle. In this method the sample and a small vibrating tip are illuminated by a laser. The phase difference between the beam reflected and scattered by the sample and the vibrating tip and a reference beam is measured with an interferometer. The phase difference is dependent on the dipole-dipole coupling of the vibrating tip with dipoles in the sample.
37. Blasse G: The luminescence efficiency of scintillators for several applications: state-of-the-art J Luminesc 1994, 60-61:930-935.
38. Lempicki A, Wojtowicz AJ: Fundamental limitations of scintillators. J Luminesc 1994, 60-61:942-947.
39. 3+ energy transfer.
40. 3:Ce-a high density, high speed scintillator for gamma detection. IEEE Trans Nucl Sci 1995, 42:275-279.
41. 4)O:Ce. J Luminesc 1994, 60-61:963-966.
42. Korzhik MV, Trower WP: Origin of scintillation in cerium-doped oxide crystals. Appl Phys Lett 1995, 66:2327-2328.
43. Sobolev NA: Light-emitting Si:Er structures: technology and physical properties (review). Semiconductors - Engl Tr 1995, 29:595-607.
44. Polman A, Van den Hoven GN, Custer JS, Shin JH, Serna R: Erbium in crystal silicon: optical activation, excitation and concentration limits. J Appl Phys 1995, 77:1256-1262.
45. Lombardo S, Campisano SU, van den Hoven GN, Polman A: Erbium in oxygen-doped silicon: electroluminescence. J Appl Phys 1995, 77:6504-6510.
46. 3+ in silicon. Appl Phys Lett 1995, 67:377-379.
47. Przybylinska H, Hendorfer G, Bruckner M, Palmetshofer L, Jantsch W: On the local structure of optically active Er centers in Si. Appl Phys Lett 1995, 66:490-492.
48. Schuppler S, Friedman SL, Marcus MA, Adler DL, Xie Y-H, Ross FM, Harris TD, Brown WL, Chabal YJ, Brus LE, Citrin PH: Dimensions of luminescent oxidized and porous silicon structures. Phys Rev Lett 1994, 72:2648-2651.
49. Delerue C, Lannoo M, Allen G, Martin E: Theoretical descriptions of porous silicon. Thin Solid Films 1995, 255:27-34.
50. Delerue C, Lannoo M, Allen G, Martin E, Mihalcescu I, Vial JC, Romestain R, Muller F, Bsiesy A: Auger and coulomb charging effects in semiconductor nanocrystallites. Phys Rev Lett 1995, 75:2228-2231. The wavelength of the photoluminescence and the electroluminescence of porous silicon can be tuned by applying a negative voltage to the sample in an aqueous sulphate or persulphate solution. This voltage tuning can be simply and convincingly explained by the Auger effect if it is assumed that porous silicon is essentially an ensemble of small (a few nanometres) crystallites with a broad size distribution.
51. Meulenkamp EA, Peter LM, Riley DJ, Wielgosz RI: On the mechanism of the voltage tuning of photoluminescence and electroluminescnce in porous silicon. J Electroanal Chem 1995, 392:97-100. This paper appeared at about the same time as [50•], and contains in principle the same explanation for the same observations.
52. Blasse G, Grabmaier BC: Luminescence materials. Berlin: Springer Verlag; 1994.