Full-hemisphere valence band photoemission spectra calculated for the ideal Si(001) surface

Surface Science

Volumn 357-358, Issue , 1996, Pages 245-250

  Solterbeck, C H ^a   Schattke, W ^a   Fadley, C S ^b  

^a UNIVERSITY OF KIEL   (Germany)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Angle resolved photoemission; Electron density; Excitation spectra calculations; Photoelectron emission; Semiconducting surfaces; Silicon; Single crystal surfaces

Indexed keywords

BINDING ENERGY; CARRIER CONCENTRATION; ELECTRON EMISSION; LIGHT POLARIZATION; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACES;

ANGLE RESOLVED PHOTOEMISSION; EXCITATION SPECTRA CALCULATIONS; HIGHLY ACCURATE ONE STEP MODEL; STRONG CIRCULAR DICHROISM; VALENCE BANDS;

PHOTOELECTRON SPECTROSCOPY;

EID: 13544261028     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00101-X     Document Type: Article

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