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Volumn 357-358, Issue , 1996, Pages 545-549

3d core-level shifts at Se/GaAs(110)

(3) Schmidt, W G a Kackell P a Bechstedt, F a

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

Author keywords

Chemisorption; Density functional calculations; Gallium arsenide; Gallium phosphide; Indium phosphide; Low index single crystal surfaces; Photoelectron emission; Selenium; Semiconductor semiconductor interfaces

Indexed keywords

ATOMS; BONDING; CALCULATIONS; CHEMISORPTION; DEPOSITION; GEOMETRY; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PHOTOEMISSION; RELAXATION PROCESSES; SELENIUM; SEMICONDUCTING GALLIUM ARSENIDE;

DENSITY FUNCTIONAL CALCULATIONS; LOW INDEX SINGLE CRYSTAL SURFACES; SEMICONDUCTOR SEMICONDUCTOR INTERFACES; SURFACE CHEMISTRY; SURFACE CORE LEVEL SHIFTS;

SURFACES;

EID: 13544259138 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(96)00220-8 Document Type: Article

Times cited : (13)

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