|
Volumn 357-358, Issue , 1996, Pages 565-570
|
AFM tip induced selective electrochemical etching of and metal deposition on p-GaAs(100) surface
|
Author keywords
Atomic force microscopy; Copper; Electrochemical methods; Etching; Gallium arsenide; Low index single crystal surfaces; Models of surface chemical reactions; Semiconducting surfaces; Semiconductor electrolyte interfaces; Solid liquid interfaces
|
Indexed keywords
ATOMIC FORCE MICROSCOPY;
CHEMICAL REACTIONS;
COPPER;
DEPOSITION;
DISSOLUTION;
ELECTRODES;
ETCHING;
MATHEMATICAL MODELS;
SCANNING;
SEMICONDUCTING GALLIUM ARSENIDE;
SURFACE ROUGHNESS;
SURFACE STRUCTURE;
ELECTROCHEMICAL METHODS;
LOW INDEX SINGLE CRYSTAL SURFACES;
METAL DEPOSITION;
SEMICONDUCTING SURFACES;
SEMICONDUCTOR ELECTROLYTE INTERFACES;
SURFACE TOPOGRAPHY;
SURFACES;
|
EID: 13544257615
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(96)00224-5 Document Type: Article |
Times cited : (28)
|
References (22)
|