Growth and characterization of Ta2O5 thin films on Si by ion beam sputter deposition

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 419-422

  Park, K S ^a   Lee, D Y ^a   Kim, K J ^b   Moon, D W ^b  

^a Korea University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Dielectric properties; Interfaces; Ion bombardment; X ray photoelectron spectroscopy (XPS)

Indexed keywords

ANNEALING; CHARACTERIZATION; DIELECTRIC PROPERTIES; FILM GROWTH; INTERFACES (MATERIALS); ION BEAMS; ION BOMBARDMENT; SILICON; SPUTTER DEPOSITION; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL STATES; ION BEAM ASSISTED SPUTTER DEPOSITION; OXYGEN VACANCIES; REACTIVE ION BEAM SPUTTER DEPOSITION; TANTALUM PENTOXIDE;

THIN FILMS;

EID: 13544256805     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08666-X     Document Type: Article

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