Anisotropy of vibrational polarizations associated with H on Si

Surface Science

Volumn 357-358, Issue , 1996, Pages 536-539

  Watanabe, Satoru ^a   Sugita, Yoshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Chemisorption; Hydrogen; Infrared absorption spectroscopy; Low index single crystal surfaces; Photon absorption spectroscopy; Semiconducting surfaces; Silicon; Stepped single crystal surfaces; Surface structure, morphology, roughness, and topography

Indexed keywords

ABSORPTION SPECTROSCOPY; ANISOTROPY; BENDING (FORMING); CHEMISORPTION; HYDROGEN; MATHEMATICAL MODELS; POLARIZATION; SEMICONDUCTING SILICON; STRETCHING; SURFACE ROUGHNESS; SURFACE STRUCTURE; VIBRATIONS (MECHANICAL);

BENDING VIBRATION; INFRARED ABSORPTION SPECTROSCOPY; LOW INDEX SINGLE CRYSTAL SURFACES; PHOTON ABSORPTION SPECTROSCOPY; SEMICONDUCTING SURFACES; STEPPED SINGLE CRYSTAL SURFACES; STRETCHING VIBRATION; SURFACE TOPOGRAPHY;

SURFACES;

EID: 13544255003     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00218-X     Document Type: Article

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