New methodologies of NBTI characterization eliminating recovery effects

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 265-268

  Denais, M ^a,b   Huard, V ^c   Parthasarathy, C ^a,b   Ribes, G ^a,d   Perrier, F ^c   Revil, N ^a   Bravaix, A ^b  

^a STMICROELECTRONICS   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

^d IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON TRAPS; HOLE TRAPS; INTERFACES (MATERIALS); ION IMPLANTATION; NITRIDING; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

GATE OXIDES; INTERFACE TRAPS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); OXIDE TRAPS;

CMOS INTEGRATED CIRCUITS;

EID: 13444309771     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. "NBTI challenges in PMOSFETs of advanced CMOS technologies", G. La Rosa, Tutorial, IEEE International Reliability Physics Symposium Proceedings, 2003.
2. "Foundry process qualification guidelines", JEDEC, 2002.
3. "Interface traps and oxide traps creation under NBTI and PBTI in advanced CMOS technology with a 2nm gate-oxide" M.Denais, V.Huard, C.Parthasarathy, G.Ribes, F.Perrier, N.Revil, A.Bravaix, IEEE Integrated Reliability Workshop proceedings, p.1 2003.
4. "A Reliable Approach to Charge-Pumping Measurements in MOS Transistors", G. Groeseneken.H.E. Maes, N. Beltran, R.F. De Keersmaecker, IEEE Transaction Electron Devices, Vol. 31, p.42, 1984.
5. "Dynamic recovery of negative bias temperature instability in p-type metal-oxide-semiconductor field-effect transistors", M. Ershov, S. Saxena, H. Karbasi, S. Winters, S. Minehane, J. Babcock, R. Lindley, P. Clifton, M. Redford, and A. Shibkov, Applied Physics Letters.Vol 83(8), p. 1647, August 25, 2003.
6. "Hole trapping effect on methodology for DC and AC Negative Bias Temperature Instability Measurements in PMOS transistors", V. Huard, M. Denais, to be published in IEEE International Reliability Physics Symposium, 2004.