Photoluminescence studies of Sn quantum dots in Si grown by MBE

Optical Materials

Volumn 27, Issue 5, 2005, Pages 836-840

  Karim, A ^a   Hansson, G V ^a   Ni, W X ^a   Holtz, P O ^a   Larsson, M ^a   Atwater, H A ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH KINETICS; HEAT TREATMENT; HETEROJUNCTIONS; INFRARED DETECTORS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; NUCLEATION; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TIN;

BAND GAPS; ELECTROMAGNETIC SPECTRA; LATTICE MISMATCH; LUMINESCENT CENTRES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13444305203     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2004.08.020     Document Type: Conference Paper

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