Dopant activation after ion shower doping for the fabrication of low-temperature poly-Si TFTs

Thin Solid Films

Volumn 475, Issue 1-2 SPEC. ISS., 2005, Pages 342-347

  Kim, Dong Min ^a   Kim, Dae Sup ^a   Ro, Jae Sang ^a  

^a Hong Ik University   (South Korea)

Author keywords

Damage recovery; Dopant activation; Ion shower doping; Low temperature poly Si

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTALLIZATION; DOPING (ADDITIVES); EXCIMER LASERS; FABRICATION; LIQUID CRYSTAL DISPLAYS; LOW TEMPERATURE EFFECTS; MIXTURES; POLYSILICON;

DAMAGE RECOVERY; DOPANT ACTIVATION; ION SHOWER DOPING; LOW-TEMPERATURE POLY-SI;

THIN FILM TRANSISTORS;

EID: 13444304102     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.07.034     Document Type: Conference Paper

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