-
1
-
-
0030081656
-
A 55 ns 0.35 mm 5 V-only 16 M flash memory with deep-power-down
-
Feb.
-
B. Venkatesh et al., "A 55 ns 0.35 mm 5 V-only 16 M flash memory with deep-power-down," in IEEE Int. Solid-State Circuits Conf., Feb. 1996, pp. 44-45.
-
(1996)
IEEE Int. Solid-state Circuits Conf.
, pp. 44-45
-
-
Venkatesh, B.1
-
2
-
-
0026953337
-
A 5 V-Only operation 0.6 mm flash EEPROM with row decoder scheme in triple-well structure
-
Nov.
-
A. Umezawa et al., "A 5 V-Only operation 0.6 mm flash EEPROM with row decoder scheme in triple-well structure," IEEE J. Solid-State Circuits, vol. 27, pp. 661-666, Nov. 1992.
-
(1992)
IEEE J. Solid-state Circuits
, vol.27
, pp. 661-666
-
-
Umezawa, A.1
-
3
-
-
0026853679
-
A new erasing and row decoding scheme for low supply voltage operation 16-Mb/64-Mb flash memories
-
Apr.
-
Y. Miyawaki et al., "A new erasing and row decoding scheme for low supply voltage operation 16-Mb/64-Mb flash memories," IEEE J. Solid-State Circuits, vol. 27, pp. 583-588, Apr. 1992.
-
(1992)
IEEE J. Solid-state Circuits
, vol.27
, pp. 583-588
-
-
Miyawaki, Y.1
-
5
-
-
0031212918
-
Flash memory cells - An overview
-
Aug.
-
P. Pavan, R. Bez, P. Olivo, and E. Zanoni, "Flash memory cells - An overview," Proc. IEEE, vol. 85, pp. 1248-1271, Aug. 1997.
-
(1997)
Proc. IEEE
, vol.85
, pp. 1248-1271
-
-
Pavan, P.1
Bez, R.2
Olivo, P.3
Zanoni, E.4
-
6
-
-
0016961262
-
On-chip high voltage generation in MNOS integrated circuits using an improved voltage multiplier technique
-
June
-
J. F. Dickson, "On-chip high voltage generation in MNOS integrated circuits using an improved voltage multiplier technique," IEEE J. Solid-State Circuits, vol. SC-24, pp. 374-378, June 1976.
-
(1976)
IEEE J. Solid-state Circuits
, vol.SC-24
, pp. 374-378
-
-
Dickson, J.F.1
-
7
-
-
0024753848
-
Analysis and modeling of on-chip high voltage generator circuits for use in EEPROM circuits
-
Oct.
-
J. S. Witters, G. Groeseneken, and H. Maes, "Analysis and modeling of on-chip high voltage generator circuits for use in EEPROM circuits," IEEE. J. Solid-State Circuits, vol. 24, pp. 1372-1380, Oct. 1989.
-
(1989)
IEEE. J. Solid-state Circuits
, vol.24
, pp. 1372-1380
-
-
Witters, J.S.1
Groeseneken, G.2
Maes, H.3
-
8
-
-
0027545680
-
Double and triple charge pump for power IC dynamic models which take parasitic effects into account
-
Feb.
-
G. Di Cataldo and G. Palumbo, "Double and triple charge pump for power IC dynamic models which take parasitic effects into account," IEEE Trans. Circuits Syst. I, vol. 40, pp. 92-101, Feb. 1993.
-
(1993)
IEEE Trans. Circuits Syst. I
, vol.40
, pp. 92-101
-
-
Di Cataldo, G.1
Palumbo, G.2
-
9
-
-
0031210141
-
A dynamic analysis of the Dickson charge pump circuit
-
Aug.
-
T. Tanzawa and T. Tanaka, "A dynamic analysis of the Dickson charge pump circuit," IEEE J. Solid-State Circuits, vol. 32, pp. 1231-1240, Aug. 1997.
-
(1997)
IEEE J. Solid-state Circuits
, vol.32
, pp. 1231-1240
-
-
Tanzawa, T.1
Tanaka, T.2
-
10
-
-
20244380154
-
Bit-line camped sensing multiplex and accurate high voltage generator for 0.25 μm flash memories
-
Feb.
-
T. Kawahara, T. Kobayashi, Y. Jyouno, S. Saeki, N. Miyamoto, T. Adachi, M. Kato, A. Sato, J. Yugami, H. Kume, and K. Kimura, "Bit-line camped sensing multiplex and accurate high voltage generator for 0.25 μm flash memories," in IEEE Int. Solid-State Circuits Conf., Tech. Dig. Papers, Feb. 1996, pp. 38-39.
-
(1996)
IEEE Int. Solid-state Circuits Conf., Tech. Dig. Papers
, pp. 38-39
-
-
Kawahara, T.1
Kobayashi, T.2
Jyouno, Y.3
Saeki, S.4
Miyamoto, N.5
Adachi, T.6
Kato, M.7
Sato, A.8
Yugami, J.9
Kume, H.10
Kimura, K.11
-
11
-
-
0029701394
-
Negative heap pump for low voltage operation flash memory
-
June
-
M. Mihara, Y. Terada, and M. Yamada, "Negative heap pump for low voltage operation flash memory," in IEEE Symp. VLSI Circuits, Tech. Dig. Papers, June 1996, pp. 76-77.
-
(1996)
IEEE Symp. VLSI Circuits, Tech. Dig. Papers
, pp. 76-77
-
-
Mihara, M.1
Terada, Y.2
Yamada, M.3
-
12
-
-
0031166547
-
Efficiency improvement in charge pump circuits
-
June
-
C. -C. Wang and J. Wu, "Efficiency improvement in charge pump circuits," IEEE J. Solid-State Circuits, vol. 32, pp. 852-860, June 1997.
-
(1997)
IEEE J. Solid-state Circuits
, vol.32
, pp. 852-860
-
-
Wang, C.C.1
Wu, J.2
-
13
-
-
0032028335
-
A high-efficiency CMOS voltage doubler
-
Mar.
-
P. Favrat, P. Deval, and M. J. Declercq, "A high-efficiency CMOS voltage doubler," IEEE J. Solid-State Circuits, vol. 33, pp. 410-416, Mar. 1998.
-
(1998)
IEEE J. Solid-state Circuits
, vol.33
, pp. 410-416
-
-
Favrat, P.1
Deval, P.2
Declercq, M.J.3
-
14
-
-
0035942669
-
Improved voltage tripler structure with symmetrical stacking charge pump
-
May
-
M. Zhang, N. Llaser, and F. Devos, "Improved voltage tripler structure with symmetrical stacking charge pump," Electron. Lett., vol. 37, pp. 668-669, May 2001.
-
(2001)
Electron. Lett.
, vol.37
, pp. 668-669
-
-
Zhang, M.1
Llaser, N.2
Devos, F.3
-
15
-
-
0018516346
-
On the I-V characteristics of floating-gate MOS transistors
-
Sept.
-
S. T. Wang, "On the I-V characteristics of floating-gate MOS transistors," IEEE Trans. Electron Devices, vol. ED-26, pp. 1292-1294, Sept. 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 1292-1294
-
-
Wang, S.T.1
-
16
-
-
0030291637
-
2 3.3 v only 128 Mb multilevel NAND Flash memory for mass storage applications
-
Nov.
-
2 3.3 V only 128 Mb multilevel NAND Flash memory for mass storage applications," IEEE J. Solid-State Circuits, vol. 31, pp. 1575-1575, Nov. 1996.
-
(1996)
IEEE J. Solid-state Circuits
, vol.31
, pp. 1575-1575
-
-
Jung, T.S.1
-
17
-
-
0018479151
-
A survey of high-density dynamic RAM cell concepts
-
June
-
P. K. Chatterjee et al., "A survey of high-density dynamic RAM cell concepts," IEEE Trans. Electron Devices, vol. ED-26, pp. 927-932, June 1979.
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, pp. 927-932
-
-
Chatterjee, P.K.1
-
18
-
-
0024612454
-
Analysis of coupling noise between adjacent bit lines in megabit DRAM's
-
Feb.
-
Y. Konishi et al., "Analysis of coupling noise between adjacent bit lines in megabit DRAM's," IEEE J. Solid-Stale Circuits, vol. 24, pp. 35-42, Feb. 1989.
-
(1989)
IEEE J. Solid-stale Circuits
, vol.24
, pp. 35-42
-
-
Konishi, Y.1
-
19
-
-
0024610684
-
Twisted bit-line architectures for multi-megabit DRAM's
-
Feb.
-
H. Hidaka et al., "Twisted bit-line architectures for multi-megabit DRAM's," IEEE J. Solid-State Circuits, vol. 24, pp. 21-27, Feb. 1989.
-
(1989)
IEEE J. Solid-state Circuits
, vol.24
, pp. 21-27
-
-
Hidaka, H.1
-
20
-
-
1542732811
-
High speed sensing scheme for CMOS DRAM's
-
Feb.
-
S. H. Dhong et al., "High speed sensing scheme for CMOS DRAM's," IEEE J. Solid-State Circuits, vol. 23, pp. 34-40, Feb. 1988.
-
(1988)
IEEE J. Solid-state Circuits
, vol.23
, pp. 34-40
-
-
Dhong, S.H.1
-
21
-
-
0004038844
-
-
P. Cappelletti, C. Golla, P. Olivo, and E. Zanoni, Eds., Norwell, MA: Kluwer
-
P. Cappelletti, C. Golla, P. Olivo, and E. Zanoni, Eds., Flash Memories. Norwell, MA: Kluwer, 1999.
-
(1999)
Flash Memories
-
-
-
24
-
-
0025565811
-
A 30 M samples/s programmable filter processor
-
Dec.
-
C. Golla et al., "A 30 M samples/s programmable filter processor," in IEEE Int. Solid-Slate Circuits Conf., vol. 25, Dec. 1990, pp. 1502-1509.
-
(1990)
IEEE Int. Solid-slate Circuits Conf.
, vol.25
, pp. 1502-1509
-
-
Golla, C.1
-
25
-
-
0043279676
-
Bootstrapped full-swing BiCMOS/BiNMOS logic circuits for 1.2-3.3 v supply voltage regime
-
June
-
A. Bellaouar et al., "Bootstrapped full-swing BiCMOS/BiNMOS logic circuits for 1.2-3.3 V supply voltage regime," IEEE J. Solid-State Circuits, vol. 30, pp. 629-636, June 1995.
-
(1995)
IEEE J. Solid-state Circuits
, vol.30
, pp. 629-636
-
-
Bellaouar, A.1
-
26
-
-
0031210025
-
Circuit techniques for 1.5-V power supply flash memory
-
Aug.
-
N. Otsuka and M. A. Horowitz, "Circuit techniques for 1.5-V power supply flash memory," IEEE J. Solid-State Circuits, vol. 32, pp. 1217-1230, Aug. 1997.
-
(1997)
IEEE J. Solid-state Circuits
, vol.32
, pp. 1217-1230
-
-
Otsuka, N.1
Horowitz, M.A.2
-
27
-
-
0032138640
-
A step-down boosted-wordline scheme for 1-V battery-operated fast SRAM's
-
Aug.
-
H. Morimura and N. Shibata, "A step-down boosted-wordline scheme for 1-V battery-operated fast SRAM's," IEEE J. Solid-State Circuits, vol. 33, pp. 1220-1227, Aug. 1998.
-
(1998)
IEEE J. Solid-state Circuits
, vol.33
, pp. 1220-1227
-
-
Morimura, H.1
Shibata, N.2
-
28
-
-
0033169552
-
Optimization of word-line booster circuits for low voltage flash memories
-
Aug.
-
T. Tanzawa and S. Atsumi, "Optimization of word-line booster circuits for low voltage flash memories," IEEE J. Solid-State Circuits, vol. 34, pp. 1091-1098, Aug. 1999.
-
(1999)
IEEE J. Solid-state Circuits
, vol.34
, pp. 1091-1098
-
-
Tanzawa, T.1
Atsumi, S.2
-
30
-
-
33646848974
-
Stand-by low-power architecture in a 3-V only 2-bit/cell 64-Mbit flash memory
-
Sept.
-
R. Micheloni, I. Motta, O. Khouri, and G. Torelli, "Stand-by low-power architecture in a 3-V only 2-bit/cell 64-Mbit flash memory," in Proc. 8th IEEE Int. Conf. Electronics, Circuits, and Systems, vol. II, Sept. 2001, pp. 929-932.
-
(2001)
Proc. 8th IEEE Int. Conf. Electronics, Circuits, and Systems
, vol.2
, pp. 929-932
-
-
Micheloni, R.1
Motta, I.2
Khouri, O.3
Torelli, G.4
-
32
-
-
33646835784
-
Architecture of non volatile memory with multi-bit cells
-
June 20-23
-
G. Campardo and R. Micheloni, "Architecture of non volatile memory with multi-bit cells," presented at the INFOS 2001 12th Bi-annual Conf., June 20-23.
-
INFOS 2001 12th Bi-annual Conf.
-
-
Campardo, G.1
Micheloni, R.2
-
33
-
-
0032304222
-
Nonvolatile multilevel memories for digital applications
-
Dec.
-
B. Riccò, G. Torelli, M. Lanzoni, A. Manstretta, H. Maes, D. Montanari, and A. Modelli, "Nonvolatile multilevel memories for digital applications," Proc. IEEE, vol. 86, pp. 2399-2421, Dec. 1998.
-
(1998)
Proc. IEEE
, vol.86
, pp. 2399-2421
-
-
Riccò, B.1
Torelli, G.2
Lanzoni, M.3
Manstretta, A.4
Maes, H.5
Montanari, D.6
Modelli, A.7
-
34
-
-
0031121346
-
Area-efficient layout design for CMOS output transistors
-
Apr.
-
K. Ming-Dou, W. Chung-Yu, and W. Tain-Shun, "Area-efficient layout design for CMOS output transistors," IEEE Trans. Electron Devices, vol. 44, pp. 635-645, Apr. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 635-645
-
-
Ming-Dou, K.1
Chung-Yu, W.2
Tain-Shun, W.3
-
35
-
-
0004427465
-
A triple-well architecture for low voltage operation in submicron CMOS devices
-
Bologna, Italy
-
C. Auricchio, R. Bez, A. Losavio, A. Maurelli, C. Sala, and P. Zabberoni, "A triple-well architecture for low voltage operation in submicron CMOS devices," in Proc. ESSDERC 96, Bologna, Italy, pp. 613-613.
-
Proc. ESSDERC 96
, pp. 613-613
-
-
Auricchio, C.1
Bez, R.2
Losavio, A.3
Maurelli, A.4
Sala, C.5
Zabberoni, P.6
-
36
-
-
0013033577
-
-
Norwell, MA: Kluwer
-
E. Charbon, R. Gharpurey, P. Miliozzi, R. G. Meyer, and A. Sangiovanni-Vincentelli, Substrate Noise - Analysis and Optimization for IC design. Norwell, MA: Kluwer, 2001.
-
(2001)
Substrate Noise - Analysis and Optimization for IC Design
-
-
Charbon, E.1
Gharpurey, R.2
Miliozzi, P.3
Meyer, R.G.4
Sangiovanni-Vincentelli, A.5
-
37
-
-
0030288232
-
2 die size 3.3 v 64 Mb flash memory with FN-NOR type four level cell
-
Nov.
-
2 die size 3.3 V 64 Mb flash memory with FN-NOR type four level cell," IEEE J. Solid-State Circuits, vol. 31, pp. 1584-1584, Nov. 1996.
-
(1996)
IEEE J. Solid-state Circuits
, vol.31
, pp. 1584-1584
-
-
Ohkawa, M.1
-
38
-
-
0035445243
-
Basic feasibility constraints for multilevel CHE-programmed flash memories
-
Sept.
-
A. Modelli, A. Manstretta, and G. Torelli, "Basic feasibility constraints for multilevel CHE-programmed flash memories," IEEE Trans. Electron Devices, vol. 48, pp. 2032-2041, Sept. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, pp. 2032-2041
-
-
Modelli, A.1
Manstretta, A.2
Torelli, G.3
-
39
-
-
0034316131
-
40-mm2 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory
-
Nov.
-
G. Campardo et al., "40-mm2 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory," IEEE J. Solid-Stale Circuits, vol. 35, pp. 1655-1667, Nov. 2000.
-
(2000)
IEEE J. Solid-stale Circuits
, vol.35
, pp. 1655-1667
-
-
Campardo, G.1
-
41
-
-
4344597192
-
High-speed low-power sense comparator for multilevel flash memories
-
Dec.
-
A. Pierin, S. Gregori, O. Khouri, R. Micheloni, and G. Torelli, "High-speed low-power sense comparator for multilevel flash memories," in Proc. 7th Int. Conf. Electronics, Circuits and Systems, vol. II, Dec. 2000, pp. 759-762.
-
(2000)
Proc. 7th Int. Conf. Electronics, Circuits and Systems
, vol.2
, pp. 759-762
-
-
Pierin, A.1
Gregori, S.2
Khouri, O.3
Micheloni, R.4
Torelli, G.5
-
42
-
-
33646847344
-
A 0.13-μm CMOS NOR Flash memory experimental chip for 4-b/cell digital storage
-
Sept.
-
R. Micheloni, O. Khouri, S. Gregori, A. Cabrini, G. Campardo, L. Fratin, and G. Torelli, "A 0.13-μm CMOS NOR Flash memory experimental chip for 4-b/cell digital storage," in Proc. 28th Eur. Solid-State Circuit Conf. (ESSCIRC), Sept. 2002, pp. 131-134.
-
(2002)
Proc. 28th Eur. Solid-state Circuit Conf. (ESSCIRC)
, pp. 131-134
-
-
Micheloni, R.1
Khouri, O.2
Gregori, S.3
Cabrini, A.4
Campardo, G.5
Fratin, L.6
Torelli, G.7
|