Comment on "Interaction effects in conductivity of Si Inversion layers at intermediate temperatures"

Physical Review Letters

Volumn 93, Issue 26 I, 2004, Pages

  Shashkin, A A ^a   Dolgopolov, V T ^a   Kravchenko, S V ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b NORTHEASTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INVERSION LAYERS; METALLIC RESISTIVITY; QUANTUM INTERFERENCE EFFECTS; TEMPERATURE-DEPENDENT RESISTIVITY;

CARRIER CONCENTRATION; COMPUTATIONAL METHODS; DATA REDUCTION; INVERSE PROBLEMS; METAL INSULATOR TRANSITION; MULTILAYERS; QUANTUM THEORY; SCATTERING; STATISTICAL METHODS; SURFACE ROUGHNESS; THERMAL CONDUCTIVITY;

SILICON;

EID: 13444261024     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.269705     Document Type: Review

References (12)

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5. -2 ...our experiments strongly support the theory attributing the anomalous metallic behavior of high-mobility Si metaloxide-semiconductor field-effect transistors (MOSFETs) to the [quantum coherent] interaction effects".
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