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Volumn 4, Issue 4, 2004, Pages 605-613

Spray cooling thermal management for increased device reliability

Author keywords

CMOS; Crowbar current; Junction temperature; Leakage current; Power dissipation; Reliability; Spray cooling; Transient response

Indexed keywords

CMOS INTEGRATED CIRCUITS; COOLING; ENERGY DISSIPATION; HEAT TRANSFER; LEAKAGE CURRENTS; MICROPROCESSOR CHIPS; RELIABILITY; SEMICONDUCTOR JUNCTIONS;

EID: 13444254016     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.838978     Document Type: Article
Times cited : (41)

References (7)
  • 3
    • 0019930895 scopus 로고
    • Comparison of GaAs device approaches for ultrahighspeed VLSI
    • Jan.
    • R. C. Eden, "Comparison of GaAs device approaches for ultrahighspeed VLSI," in Proc. IEEE, vol. 70, Jan. 1982, pp. 5-12.
    • (1982) Proc. IEEE , vol.70 , pp. 5-12
    • Eden, R.C.1
  • 5
    • 0029540360 scopus 로고
    • Cryogenic ultra low power CMOS
    • and references cited therein
    • J. B. Burr, "Cryogenic ultra low power CMOS," in IEEE Int. Symp. Low Power Electronics, 1995, p. 9.4. and references cited therein.
    • (1995) IEEE Int. Symp. Low Power Electronics
    • Burr, J.B.1
  • 6
    • 4444359627 scopus 로고    scopus 로고
    • Spray cooling thermal management for semiconductor chips undergoing burn-in
    • Maui, HI, Paper IPACK2003-35137
    • T. Cader, M. C. Harris, C. Tilton, and B. H. Tolman, "Spray cooling thermal management for semiconductor chips undergoing burn-in," in Proc. InterPACK 2003, Maui, HI, 2003, Paper IPACK2003-35137.
    • (2003) Proc. InterPACK 2003
    • Cader, T.1    Harris, M.C.2    Tilton, C.3    Tolman, B.H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.