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Volumn 447-448, Issue , 2004, Pages 605-609

Fabrication and characterization of high frequency SAW device with IDT/ZnO/AlN/Si configuration: Role of AlN buffer

Author keywords

(0002) orientation; AlN buffer; Crystal quality; Insertion loss; Piezoelectric ZnO thin film; SAW device; Surface roughness

Indexed keywords

ALUMINUM NITRIDE; CORRELATION METHODS; CRYSTAL ORIENTATION; FREQUENCY RESPONSE; INSERTION LOSSES; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PIEZOELECTRIC DEVICES; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

EID: 1342323666     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.07.022     Document Type: Conference Paper
Times cited : (32)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.