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Volumn 447-448, Issue , 2004, Pages 605-609
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Fabrication and characterization of high frequency SAW device with IDT/ZnO/AlN/Si configuration: Role of AlN buffer
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Author keywords
(0002) orientation; AlN buffer; Crystal quality; Insertion loss; Piezoelectric ZnO thin film; SAW device; Surface roughness
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Indexed keywords
ALUMINUM NITRIDE;
CORRELATION METHODS;
CRYSTAL ORIENTATION;
FREQUENCY RESPONSE;
INSERTION LOSSES;
MAGNETRON SPUTTERING;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
PIEZOELECTRIC DEVICES;
SURFACE ROUGHNESS;
X RAY DIFFRACTION ANALYSIS;
ZINC OXIDE;
ALN BUFFERS;
CRYSTAL QUALITY;
PIEZOELECTRIC ZNO THIN FILMS;
ACOUSTIC SURFACE WAVE DEVICES;
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EID: 1342323666
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2003.07.022 Document Type: Conference Paper |
Times cited : (32)
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References (13)
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