Photocapacitance effect in narrow band gap PbSnTe

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5126, Issue , 2002, Pages 341-346

  Klimov, Alexander E ^a   Shumsky, Vladimir N ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Far IR; Lead tin tellurium; Narrow band gap; Permittivity; Submillimeter wavelength

Indexed keywords

CAPACITANCE; ENERGY GAP; INFRARED RADIATION; LEAD COMPOUNDS; LIGHTING; PERMITTIVITY; SOLID SOLUTIONS; SUBMILLIMETER WAVES; THERMAL EFFECTS;

FAR INFRARED RADIATION; LEAD-TIN-TELLURIUM; NARROW BAND GAP; PHOTOCAPACITANCE EFFECT;

ELECTROOPTICAL EFFECTS;

EID: 1342311322     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)

1. A. A. Averkin, V. I. Kaidanov, and R. B. Melnik, "About nature of indium impurity states in lead tellurium", Fizika i Technicka Poluprovodnikov (in Russian) 5, p. 91, 1971.
2. xTe solid solutions", Fizika i Technicka Poluprovodnikov (in Russian), 7, p. 794, 1973.
3. A. Drabkin, and B. Ya. Moizhes, "Spontaneous dissociation of neutral impurity states to positive and negative charge states", Fizika i Technicka Poluprovodnikov (in Russian), 15, p. 625, 1981.
4. A. N. Veis, V. I. Kaidanov, Yu. I. Ravitch, I. A. Ryabtseva, and Yu. I. Ukhanov, "Investigation of absorption coefficient of PbTe with indium", Fizika i Technicka Poluprovodnikov (in Russian), 10, p. 104, 1976.
5. xTe doping with indium", Fizika i Technicka Poluprovodnikov (in Russian), 9, p. 1873, 1975.
6. x0.22Te with large content of indium", Pisma v JETP (in Russian) 29, p. 21, 1979.
7. xTe(In) alloys", Pisma v JETP (in Russian) 29, p. 11, 1979.
8. xTe with In impurity compounds", Pisma v JETP (in Russian) 31, p. 367, 1980.
9. 6 semiconductors", Doklady Akademii Nauk (in Russian) 255, p. 93, 1980.
10. xTe and dependence of photoconductance of epitaxial layers on thickness", Fizika i Technicka Poluprovodnikov (in Russian) 21, p. 1789, 1987.
11. xTe far-infrared detectors", Appl. Phys. Lett. 76, p. 2835, 2000.
12. R. T. Bate, D. L. Carter, and J. S. Wrobel, "Paraelectric behavior of PbTe", Phys. Rev. Lett. 25, p. 159, 1970.
13. S. Nishi, H. Kawamura, K. Murase, "Study of Lattice Instability by mm-Wave Magnetoplasma Reflection in PbTe-SnTe Compound Semiconductors", Phys. Stat. Sol (b) 97, p. 581, 1980.
14. xTe", Fiz. Tverd. Tela (in Russian) 1, p.273, 1990.
15. xTe (x=0.25) crystals doped by indium", Fiz. Tverd. Tela (in Russian) 33, p.9, 1991.
16. 0.22Te:In", Phys. Stat. Sol (a) 71, p.K21, 1982.
17. V.M. Fridkin, Photoferroelectrics (in Russian), Nauka, Moscow, 1979.