Investigation of the quantum confinement effects in Ge dots by electrical measurements

Applied Surface Science

Volumn 225, Issue 1-4, 2004, Pages 281-286

  Ma, X Y ^a,b   Huang, Sh H ^a   Chen, Y ^a   Lu, F ^a  

^a FUDAN UNIVERSITY   (China)

^b SHAOXING COLLEGE OF ARTS AND SCIENCES   (China)

Author keywords

Admittance spectroscopy; C V; Deep level transient spectroscopy; Ge QD; Hole potential height E

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; KINETIC THEORY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPIC ANALYSIS;

ADMITTANCE SPECTROSCOPY; HOLE POTENTIAL HEIGHT Δ E;

GERMANIUM;

EID: 1342308341     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.10.032     Document Type: Article

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