Photoluminescence characteristics of pulsed laser deposited Y 2-xGdxO3:Eu3+ thin film phosphors

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 290-296

  Bae, J S ^a   Shim, K S ^a   Kim, S B ^a   Jeong, J H ^a   Yi, S S ^b   Park, J C ^b  

^a Pukyong National University   (South Korea)

^b Silla University   (South Korea)

Author keywords

A1. Atomic force microscopy; A3. Laser epitaxy; B1. Oxides; B1. Yttrium compounds; B2. Phosphors

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; EPITAXIAL GROWTH; FILM GROWTH; FLAT PANEL DISPLAYS; PHOSPHORS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SURFACE ROUGHNESS; THIN FILMS; YTTRIUM COMPOUNDS;

LASER EPITAXY; THIN FILM PHOSPHORS;

CRYSTAL GROWTH;

EID: 1342306669     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.075     Document Type: Article

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