Determination of the distribution of electronic states in hydrogenated amorphous germanium by capacitance-techniques

Semiconductor Science and Technology

Volumn 19, Issue 2, 2004, Pages 270-276

  Serin, Tülay ^a   Serin, Necmi ^a   Schröder, Bernd ^b  

^a ANKARA UNIVERSITY   (Turkey)

^b University of Koblenz Landau   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS GERMANIUM; CAPACITANCE-VOLTAGE-FREQUENCY CHARACTERISTIC; CARRIER TRANSPORT;

ACTIVATION ENERGY; AMORPHOUS MATERIALS; CAPACITANCE; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; FERMI LEVEL; GERMANIUM; SUBSTRATES; THIN FILMS;

ELECTRONIC DENSITY OF STATES;

EID: 1342284989     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/2/026     Document Type: Article

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