Kinetic growth manipulation of Si(0 0 1) homoepitaxy

Surface Science

Volumn 552, Issue 1-3, 2004, Pages 35-45

  Esser, Marcus ^a   Zoethout, Erwin ^a   Zandvliet, Harold J W ^a   Wormeester, Herbert ^a   Poelsema, Bene ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Epitaxy; Growth; Low energy electron diffraction (LEED); Scanning tunneling microscopy; Silicon

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DIMERS; ELECTRON BEAMS; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY;

KINETIC GROWTH MANIPULATIONS; THIN FILM STRUCTURES;

SILICON;

EID: 1342264258     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.01.012     Document Type: Article

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