ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in A 155 Mb/s WDM-PON

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 746-749

  Lee, J K ^a   Lee, E H ^a   Shin, D J ^a   Bang, Y C ^a   Kim, J Y ^a   Lee, J H ^a   Kim, H S ^a   Oh, Y K ^a   Kim, T I ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMMUNICATION CHANNELS (INFORMATION THEORY); COMPOSITION; FIBER OPTIC NETWORKS; SIGNAL THEORY; SPONTANEOUS EMISSION; THRESHOLD VOLTAGE; WAVELENGTH DIVISION MULTIPLEXING;

ASYMMETRIC FACET REFLECTIVITY; ASYMMETRIC MULTIPLE QUANTUM WELL (AMQW); HIGH-REFLECTION COATING; WAVELENGTH;

QUANTUM WELL LASERS;

EID: 13244274424     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Sean C Woodworth, et al, "Experimental analysis of a broadly tunable InGaAsP laser with compositionally varied quantum wells", IEEE J. of Quantum Electron. 39, 426-430 (2003).
2. H.D. Kim, et al, "A low-cost WDM source with an ASE injected Fabry-Perot semiconductor laser", IEEE Photonics Technol. Lett, 12, 1067-1069 (2000).
3. D.J.Shin, et al, "155 Mbit/s transmission using ASE-injected Fabry-Perot laser diode in WDM-PON over 70C temperature range'', Electron. Lett, 39, 1331-1332 (2003).