Electron beam lithography for data storage: Quantifying the proximity effect as a function of CAD design and thin metal layers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 2936-2942

  Eckert, Andrew ^a   Mountfield, Keith ^a  

^a SEAGATE RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC NUMBERS; DOSE FRACTION; E-BEAM PROXIMITY EFFECT; RUTHERFORD ELASTIC SCATTERING MODEL;

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DATA STORAGE EQUIPMENT; DISTANCE MEASUREMENT; MAGNETIC RECORDING; MATHEMATICAL MODELS; METALLIC FILMS; MONTE CARLO METHODS; NICKEL; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SURFACE ACTIVE AGENTS; TANTALUM; THIN FILMS; VACUUM;

ELECTRON BEAM LITHOGRAPHY;

EID: 13244272400     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1815297     Document Type: Conference Paper

References (7)

1. XiaoMin Yang et al., Proceedings of SPIE Microlithography (SPIE, Bellingham, WA, 2004).
2. Andrew Eckert et al., Proceedings of SPIE Microlithography (SPIE, Bellingham, WA, 2004).
3. P. Rai-Choudhury, Handbook of Microlithography, Micromachining, and Microfabrication, Vol. 1, edited by M. McCord and M. Rooks (SPIE, Bellingham, WA, 1997), Chap. 2, p. 139.
4. We believe this is due to the hybrid nature of this resist material, that at significantly low doses the resist actually has a faster dissolution rate. But this is still unconfirmed by rigorous experimental data.
5. Proxecco Users Manual, Numerical Technologies, CATS Software Group.
6. Keith Mountfield et al., Advances in Resist Technology and Processing, XXI Proceedings of SPIE Microlithography (SPIE, Bellingham, WA, 2004).
7. Please look at the following web site: www.nist.gov/srd/o_nist64.html